(China (Mainland))
Product Summary
The 2SK360IGETL-EQ is a Silicon N-Channel MOS FET.
Parametrics
2SK360IGETL-EQ absolute maximum ratings: (1)Drain to source voltage VDSX: 20 V; (2)Gate to source voltage VGSS: ±5 V; (3)Drain current ID: 30 mA; (4)Gate current IG: ±1 mA; (5)Channel power dissipation Pch: 150 mW; (6)Channel temperature Tch: 150 °C; (7)Storage temperature Tstg: –55 to +150 °C.
Features
2SK360IGETL-EQ features: (1)Drain to source breakdown voltage V(BR)DSX: 20 V ID = 100 μ A, VGS = –4 V; (2)Gate cutoff current IGSS: ±20 nA VGS = ±5 V, VDS = 0; (3)Drain current IDSS: 12 mA VDS = 10 V, VGS = 0; (4)Gate to source cutoff voltage VGS(off): –2.0 V VDS = 10 V, ID = 10 μA; (5)Forward transfer admittance VDS = 10 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 2.5 — pF Output capacitance Coss — 1.6 — pF Reverse transfer capacitance Crss — 0.03 — pF; (6)VDS = 10 V, VGS = 0, f = 1 MHz Power gain PG — 30 — dB Noise figure NF — 2.0 — dB; (7)VDS = 10 V, VGS = 0, f = 100 MHz.
Diagrams
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