Product Summary

The AOT430 is an N-Channel enhancement mode field effect transistor. The AOT430 uses advanced trench technology and design to provide excellent RDS (on) with low gate charge. The AOT430 is suitable for use in PWM, load switching and general purpose applications.

Parametrics

AOT430 absolute maximum ratings: (1) Drain-Source Voltage VDS: 75V; (2) Gate-Source Voltage VGS: ±25V; (3) Continuous Drain Current ID: 80A (Tc=25°C) , 78A (Tc=100°C) ; (4) Pulsed Drain Current IDM: 200A; (5) Avalanche Current IAR: 45A; (6) Repetitive avalanche energy L=0.3mH EAR: 300mJ; (7) Power Dissipation: 268W (Tc=25°C) , 134W (Tc=100°C) ; (8) Junction and Storage Temperature Range: -55 to 175°C.

Features

AOT430 features: (1) VDS (V)=75V; (2) ID=80A (VGS=10V) ; (3) RDS (0N) < 11.5mΩ (VGS=10V) .

Diagrams

AOT430 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
AOT430
AOT430


MOSFET N-CH 75V 80A TO-220

Data Sheet

Negotiable 
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(USD)
Quantity
AOT400
AOT400

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Data Sheet

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Data Sheet

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Data Sheet

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AOT410L
AOT410L


MOSFET N-CH 100V 150A TO-220

Data Sheet

0-1: $1.40
1-25: $1.13
25-100: $1.01
100-250: $0.90
250-500: $0.79
500-1000: $0.65
1000-2500: $0.61
2500-5000: $0.59
5000-10000: $0.56
AOT412
AOT412


MOSFET N-CH 100V 60A TO-220

Data Sheet

0-1: $1.01
1-25: $0.81
25-100: $0.71
100-250: $0.62
250-500: $0.55
500-1000: $0.43
1000-2500: $0.40
2500-5000: $0.38
5000-10000: $0.37
AOT414
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MOSFET N-CH 100V 43A TO-220

Data Sheet

0-1: $0.64
1-25: $0.51
25-100: $0.45
100-250: $0.39
250-500: $0.35
500-1000: $0.27
1000-2500: $0.26
2500-5000: $0.24
5000-10000: $0.23