(China (Mainland))
Product Summary
The IS61LV12816L-8T is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The IS61LV12816L-8T is fabricated using high-performance CMOS technology of the ISSI. The IS61LV12816L-8T is packaged in the JEDEC standard 44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm) .
Parametrics
IS61LV12816L-8T absolute maximum ratings: (1) Power Supply Voltage Relative to GND VDD: -0.5 to 4.0V; (2) Terminal Voltage with Respect to GND VTERM: -0.5 to VDD +0.5V; (3) Storage Temperature TSTG: -65 to +150°C; (4) Power Dissipation PT: 1.0W.
Features
IS61LV12816L-8T features: (1) High-speed access time: 8, 10 ns; (2) Operating Current: 50mA (typ.) ; (3) Stand by Current: 700μA (typ.) ; (4) TTL and CMOS compatible interface levels; (5) Single 3.3V power supply; (6) Fully static operation: no clock or refresh required; (7) Three state outputs; (8) Data control for upper and lower bytes; (9) Industrial temperature available; (10) Lead-free available.
Diagrams
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| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IS61LV12816L-8T |
ISSI |
SRAM 2Mb 128Kx16 8ns 3.3v |
Data Sheet |
Negotiable |
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IS61LV12816L-8TL |
ISSI |
SRAM 2Mb 128Kx16 10ns 3.3V |
Data Sheet |
Negotiable |
|
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IS61LV12816L-8TL-TR |
ISSI |
SRAM 2Mb 128Kx16 10ns 3.3V |
Data Sheet |
Negotiable |
|
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|
IS61LV12816L-8T-TR |
ISSI |
SRAM 2Mb 128Kx16 8ns 3.3v |
Data Sheet |
Negotiable |
|
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