Product Summary

The MRF282SR1 is an N-Channel Enhancement-Mode Lateral MOSFET.

Parametrics

MRF282SR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: ±20 Vdc; (3)Total Device Dissipation @ TC = 25°C Derate above 25°C PD: 60W; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 200 °C.

Features

MRF282SR1 features: (1)Excellent Thermal Stability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)RoHS Compliant; (4)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

Diagrams

MRF282SR1 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF282SR1
MRF282SR1


IC MOSFET RF N-CHAN NI-200S

Data Sheet

0-500: $21.09
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF20030
MRF20030

Other


Data Sheet

Negotiable 
MRF20030R
MRF20030R

Other


Data Sheet

Negotiable 
MRF20060
MRF20060

Other


Data Sheet

Negotiable 
MRF20060_1248487
MRF20060_1248487

Other


Data Sheet

Negotiable 
MRF20060R
MRF20060R

Other


Data Sheet

Negotiable 
MRF20060RS
MRF20060RS

Other


Data Sheet

Negotiable