(China (Mainland))
Product Summary
The MRF9180 is a lateral n-channel RF power mosfet. Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of the MRF9180 make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.
Parametrics
MRF9180 absolute maximum ratings: (1)Drain–Source Voltage: VDSS 65 Vdc; (2)Gate–Source Voltage: VGS –0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25℃ Derate above 25℃ PD: 388Watts; (4)Storage Temperature Range Tstg: –65 to +200 ℃; (5)Operating Junction Temperature TJ: 200 ℃.
Features
MRF9180 features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10: 1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large–Signal Impedance Parameters.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF9180 |
Other |
|
Data Sheet |
Negotiable |
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 |
MRF9180R5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 170W 26V LDMOS NI1230 |
Data Sheet |
Negotiable |
|
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MRF9180R6 |
Freescale Semiconductor |
Transistors RF MOSFET Power 170W 26V LDMOS NI1230 |
Data Sheet |
Negotiable |
|
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MRF9180S |
Other |
|
Data Sheet |
Negotiable |
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