(China (Mainland))
Product Summary
The PHW80NQ10T is an N-channel enhancement mode field-effect power transistor in a plastic envelope using trech technology. Applications of the PHW80NQ10 include: d.c.tod.c.converters, switchedmodepowersupplies. The PHW80NQ10is supplied in the SOT429 (TO247) conventional leaded package.
Parametrics
PHW80NQ10T absolute maximum ratings: (1) Drain-source voltage VDSS: 100V (Tj=25°C to 175°C; (2) Drain-gate voltage Tj=25°C to 75°C; RGS=20kΩ: 100V; (3) Gate-source voltage VGS: ±20V; (4) Continuous drain current Tmb=25°C, ID: 80A, Tmb=100°C: 57A; (5) Pulsed drain current Tmb=25°C: 320A; (6) Total power dissipation: 263W; (7) Operating junction an
storage temperature: 175°C.
Features
PHW80NQ10T features: (1) Trench technology; (2) Very low on-state resistance; (3) Fast switching; (4) Low thermal resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 PHW80NQ10T |
NXP Semiconductors |
MOSFET N-CH TRENCH 100V 80A |
Data Sheet |
Negotiable |
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PHW80NQ10T,127 |
NXP Semiconductors |
MOSFET N-CH TRENCH 100V 80A |
Data Sheet |
Negotiable |
|
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