(China (Mainland))
Product Summary
The PMBFJ112 is a symmetrical N-channel junction FET, The is in a surface mount SOT23 envelope. Applications of the include: analog switches,choppers, commutators, multiplexers and thin and thick film hybrids.
Parametrics
PMBFJ112 absolute maximum ratings: (1) drain-source voltage VDS: ±40V; (2) gate-source voltage VGSO: -40V; (3) drain-drain voltage VGDO: -40V; (4) forward gate current (DC) IG: 50mA; (5) total power dissipation Ptot: 300mW (Tamb=25°C) ; (6) storage temperature Tstg: -65 to 150°C; (7) operating junction temperature Tj: 150°C.
Features
PMBFJ112 features: (1) high-speed switching; (2) Interchangeability of drain and source connections; (3) Low RDSon at zero gate voltage (<30Ωfor PMBFJ111) .
Diagrams
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Pricing (USD) |
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 PMBFJ112 T/R |
NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS |
Data Sheet |
Negotiable |
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PMBFJ112,215 |
NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS |
Data Sheet |
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