Product Summary

The SPW20N60C3 is a cool MOS power transistor.

Parametrics

SPW20N60C3 absolute maximum ratings: (1)Continuous drain current TC =25℃ TC = 100 ℃ ID: 20.7A; (2)Pulsed drain current, tp limited by Timax ID puls: 62.1A; (3)Avalanche energy, single pulse /D= 10A, VDD = 50V eas: 690 mJ; (4)Avalanche energy, repetitive fAR limited by Tjmax1 /D = 20 A, VDD = 50V ear: 1mJ; (5)Avalanche current, repetitive fAR limited by Tjmax IAR: 20 A; (6)Reverse diode dv/dt dv/dt: 15 V/ns; (7)Gate source voltage static VGS: ±20 V; (8)Gate source voltage AC(f>1Hz)VGS: ±30V; (9)Power dissipation, 7q = 25℃ Ptot: 208 w; (10)Operating and storage temperature Ti > 7stg: -55 to +150 ℃.

Features

SPW20N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance.


Diagrams

SPW20N60C3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SPW20N60C3
SPW20N60C3

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Data Sheet

0-1: $2.86
1-10: $2.55
10-100: $2.09
100-250: $1.49
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Quantity
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Data Sheet

0-1: $2.86
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Data Sheet

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Data Sheet

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