Product Summary

The SSH22N50A is an advanced power MOSFET.

Parametrics

SSH22N50A absolute maximum ratings: (1)Drain-to-Source Voltage: 500V; (2)Continuous Drain Current (TC=25℃): 22A; (3)Continuous Drain Current (TC=100℃): 13.4A; (4)Drain Current-Pulsed : 88A; (5)Gate-to-Source Voltage: 30V; (6)Single Pulsed Avalanche Energy: 2151MJ; (7)Avalanche Current: 22A; (8)Repetitive Avalanche Energy: 27.8MJ; (9)Peak Diode Recovery dv/dt: 3.5V/ns; (10)Total Power Dissipation (TC=25℃): 278W; (11)Operating Junction and Storage Temperature Range: - 55 to +150℃; (12)Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds: 300℃.

Features

SSH22N50A features: (1)Avalanche Rugged Technology; (2)Rugged Gate Oxide Technology; (3)Lower Input Capacitance; (4)Improved Gate Charge; (5)Extended Safe Operating Area; (6)Lower Leakage Current: 10mA (Max.)@ VDS = 500V; (7)Lower RDS(ON): 0.197Ω (Typ.).

Diagrams

SSH22N50A pin connection

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