(China (Mainland))
Product Summary
The ZXTN2010ZTA is an NPN low saturation medium power transistor. Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. The applications of the include Emergency lighting circuits, Motor driving (including DC fans), Solenoid, relay and actuator drivers, DC-DC modules, Backlight inverters, Power switches, MOSFET gate drivers.
Parametrics
ZXTN2010ZTA absolute maximum ratings: (1)Collector-base voltage, BVCBO: 150 V; (2)Collector-emitter voltage, BVCEO: 60 V; (3)Emitter-base voltage, BVEBO: 7 V; (4)Continuous collector current, IC: 5 A; (5)Peak pulse current, ICM: 20 A; (6)Power dissipation at TA =25℃, PD: 1.5W; Linear derating factor, PD: 12mW/℃; (7)Operating and storage temperature range, Tj, Tstg: -55 to +150℃.
Features
ZXTN2010ZTA features: (1)Extremely low equivalent on-resistance; RSAT = 30mV at 6A; (2)5 amps continuous current; (3)Up to 20 amps peak current; (4)Very low saturation voltages; (5)Excellent hFE characteristics up to 10 amps.
Diagrams
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 ZXTN2010ZTA |
Diodes Inc. |
Transistors Bipolar (BJT) 60V NPN Med Power |
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