(China (Mainland))
Product Summary
The 2SK2399 is a TOSHIBA filed effect transistor. Application of the 2SK2399 include: high speed, high current switching, chopper regulator, DC-DC conveter and motor drive.
Parametrics
2SK2399 maximum ratings: (1) Drain-source voltage VDDS: 100V; (2) Drain-Gate voltage (RGS=20kΩ) VDGR: 100V; (3) Gate-source voltage VGSS: ±20V; (4) Drain Current DC, ID: 5A, Pulse IDP: 20A; (5) Drain power dissipation (Tc=25°C) , PD: 20W; (6) Single pulse avalanche energy EAS: 180mJ; (7) Avalanche energy EAR: 2mJ; (8) Channel temperature Tch: 150°C; (9) Storage temperature range Tstg: -55 to 150°C
Features
2SK2399 features: (1) 4V gate drive; (2) low drain-source on resistanc: RD (ON) =0.17Ω (Typ.) ; (3) high foward transfer admittance: 4.5s (Typ.) ; (4) low leakage current: IDSS=100μA (Max.) (VDS=100V) ; (5) Enhancement-Mode: Vth=0.8 to 2.0V (VDS=10V, ID=1mA) .
Diagrams
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Pricing (USD) |
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 2SK2399 |
Other |
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Data Sheet |
Negotiable |
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2SK2399(Q) |
Toshiba |
MOSFET N-Ch 100V 5A 0.17 ohm |
Data Sheet |
Negotiable |
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2SK2399(TE16L1,NQ) |
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MOSFET N-CH 100V 5A PW-MOLD |
Data Sheet |
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