Product Summary
The 2SK3019TL is an N-channel MOSFET. And the is in SOT-23 plastic-encapsulate package.
Parametrics
2SK3019TL absolute maximum ratings: (1) Drain-source voltage VDS: 30V; (2) Gate-source voltage VGSS: ±20V; (3) Continuous drain current ID: 0.1A; (4) Thermal resistance junction-to-ambient: 833°C/W; (5) power dissipation: 0.15W; (6) Junction temperature: 150°C; (7) Storage temperature: -55 to +150°C.
Features
2SK3019TL features: (1) low on-resistance; (2) fast switching speed; (3) low voltage drive makes this device ideal for portable equipment; (4) easily designed drive circuits; (5) easy to parallel; (6) Pb-free package is available; (7) RoHS product for packing code suffix G, Halogen free product for packing code suffix H.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2SK3019TL |
ROHM Semiconductor |
MOSFET N-CH 30V .1A SOT416 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2SK3001 |
Other |
Data Sheet |
Negotiable |
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2SK3009 |
Other |
Data Sheet |
Negotiable |
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2SK3012 |
Other |
Data Sheet |
Negotiable |
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2SK3013 |
Other |
Data Sheet |
Negotiable |
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2SK3017 |
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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