(China (Mainland))
Product Summary
The AOT430 is an N-Channel enhancement mode field effect transistor. The AOT430 uses advanced trench technology and design to provide excellent RDS (on) with low gate charge. The AOT430 is suitable for use in PWM, load switching and general purpose applications.
Parametrics
AOT430 absolute maximum ratings: (1) Drain-Source Voltage VDS: 75V; (2) Gate-Source Voltage VGS: ±25V; (3) Continuous Drain Current ID: 80A (Tc=25°C) , 78A (Tc=100°C) ; (4) Pulsed Drain Current IDM: 200A; (5) Avalanche Current IAR: 45A; (6) Repetitive avalanche energy L=0.3mH EAR: 300mJ; (7) Power Dissipation: 268W (Tc=25°C) , 134W (Tc=100°C) ; (8) Junction and Storage Temperature Range: -55 to 175°C.
Features
AOT430 features: (1) VDS (V)=75V; (2) ID=80A (VGS=10V) ; (3) RDS (0N) < 11.5mΩ (VGS=10V) .
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 AOT430 |
|
MOSFET N-CH 75V 80A TO-220 |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
|
AOT430 |
|
MOSFET N-CH 75V 80A TO-220 |
Data Sheet |
Negotiable |
|
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|
AOT440 |
|
MOSFET N-CH 40V 15.5A TO220 |
Data Sheet |
|
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 |
AOT472 |
|
MOSFET N-CH 75V 10A TO220 |
Data Sheet |
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AOT470 |
|
MOSFET N-CH 75V 10A TO220 |
Data Sheet |
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AOT462 |
|
MOSFET N-CH 60V 70A TO-220 |
Data Sheet |
Negotiable |
|
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|
AOT460 |
|
MOSFET N-CH 60V 85A TO-220 |
Data Sheet |
Negotiable |
|
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